000			01994cam a22002775i 4500
005			20240117102401.0
008			171118s2018 xxua|||g |||| 0|eng |
020			_a9783319690520
040			_aUISEK-EC _bspa _erda
082	0	4	_a620.11297 _2 _bR312p 2018
100	1		_910074 _aRedaelli, Andrea _eedt
245	1	0	_aPhase Change Memory : _bdevice physics, reliability and applications / _ceditor Andrea Redaelli.
264		1	_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2018.
300			_aXVIII, 330 paginas _bilustraciones _c24 cm
336			_atxt
337			_2rdamedia _an
338			_2rdacarrier _anc
505	0		_aChapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
520			_aThis book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
526			_aMecatrónica
650	1	7	_aCircuitos electrónicos _2lemb _9910
650	2	7	_aMateriales _2lemb _95029 _xElectricidad
650		0	_aOptical materials.
650	2	7	_aMateriales _2lemb _95029 _x Materiales ópticos
942			_cBK
999			_c14857 _d14857