Biblioteca UISEK

Catálogo en línea

Imagen de portada de Amazon
Imagen de Amazon.com

Phase Change Memory : device physics, reliability and applications / editor Andrea Redaelli.

Por: Tipo de material: TextoTextoEditor: Cham : Springer International Publishing : Imprint: Springer, 2018Descripción: XVIII, 330 paginas ilustraciones 24 cmTipo de contenido:
  • texto
Tipo de medio:
  • no mediado
Tipo de soporte:
  • volumen
ISBN:
  • 9783319690520
Tema(s): Clasificación CDD:
  • 620.11297   R312p 2018
Contenidos:
Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
Resumen: This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
Etiquetas de esta biblioteca: No hay etiquetas de esta biblioteca para este título. Ingresar para agregar etiquetas.
Valoración
    Valoración media: 0.0 (0 votos)
Existencias
Tipo de ítem Biblioteca actual Signatura Copia número Estado Fecha de vencimiento Código de barras
Libro Libro Miguel de Cervantes Sala general 620.11297 R312p 2018 (Navegar estantería(Abre debajo)) Ej.1 Disponible 00015795

Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

Mecatrónica

No hay comentarios en este titulo.

para colocar un comentario.

Con tecnología Koha